Design and Implementation RF High Power and Efficiency Amplifier GaN HEMT with Class E Switching Topology for Wireless Power Transfer

Abstract

This paper presents the design and implementation of a high-efficiency Class E High-Power Amplifier (HPA) for wireless power transfer applications at 2.6 GHz. Utilizing GaN HEMT technology, the amplifier achieves exceptional performance through optimized switch-mode operation and advanced impedance matching techniques. The design process incorporates c simulations including DC IV characterization, stability analysis, and load-pull optimization to determine the optimal operating parameters. Class E Implementation with Transmission Line employing λ/8 and λ/12 transmission line stubs ensures minimal reflections, with measured return losses below -33 dB. The implemented design demonstrates outstanding efficiency, reaching 81.57% power-added efficiency (PAE) and 86.48% drain efficiency (DE) in simulations, while maintaining 277.7 W output power. Practical measurements validate the design's performance, showing 16 dB gain and stable operation. The compact PCB implementation on Rogers Duroid 5880 substrate (104.4 × 68.5 mm) confirms the feasibility of the design. This work significantly advances the state-of-the-art in high-efficiency RF power amplification, particularly for wireless power transfer systems where energy efficiency is paramount. The results demonstrate the potential of Class E GaN-based amplifiers to enable efficient, high-power wireless energy transmission, with important implications for applications ranging from electric vehicle charging to remote power delivery systems.