ANALYSIS OF BROKEN PIN DEFECT ON MODULE DUAL MC CU IN ENDTEST PROCESS

dc.contributor.advisorDarmoyono, Aditya Gautama
dc.contributor.authorSaleh, Ihzanuddin
dc.date.accessioned2025-01-03T07:43:19Z
dc.date.issued2024-08-08
dc.descriptionFull Page Artikel, Lembar Pengesahan, dan Borang Publikasi
dc.description.abstractAbstract— PIN in semiconductors is an acronym for "Positive-Intrinsic-Negative". This refers to the three-layer structure of some semiconductor components such as PIN diodes, which consists of a positive layer (P), an intrinsic or uncharged layer (I), and a negative layer (N). Pins have a variety of functions, in this case the pin is a component in semiconductors that functions as a connector from one component to another. Broken pins are failures that often occur in the Dual MC Cu module in the EndTest process, almost every load there must be broken pin damage, because this module uses sensitive needle pins compared to pins in other modules. There are several factors that affect broken pins, namely; a few wrong pin testing positions, adapters that are too strong in pressure, and from the previous process. This study was conducted to analyze the factors and prevent damage done to the EndTest process caused by broken pins in order to minimize the damage that occurs. This research uses the Fishbone Method and Pareto Chart. This research can analyze the failure, can find the aspects involved in the main failure, and find the causes of product defects in the EndTest production process.
dc.identifier.citationAPA
dc.identifier.kodeprodiKODEPRODI20406#TEKNIK ELEKTRONIKA MANUFAKTUR
dc.identifier.nidnNIDN0426048202
dc.identifier.nim3222101036
dc.identifier.urihttp://103.209.1.147:4000/handle/PL029/2964
dc.language.isoen
dc.subjectTECHNOLOGY::Electrical engineering, electronics and photonics::Other electrical engineering, electronics and photonics
dc.subjectTECHNOLOGY::Materials science::Other processing/assembly
dc.titleANALYSIS OF BROKEN PIN DEFECT ON MODULE DUAL MC CU IN ENDTEST PROCESS
dc.typeArticle

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