Design and Implementation of High Conversion Efficiency RF to DC Rectifier Based on Inverted Gate Topology of Class F GaN HEMT RF High Power Amplifier for Wireless Power Transfer

Abstract

ABSTRACT This final project presents the design of a high-efficiency RF-to-DC rectifier based on the inverted gate topology of a Class-F GaN HEMT RF high power amplifier for wireless battery charging applications. The proposed rectifier utilizes the timereversal duality principle to convert RF energy into DC power efficiently. The circuit employs a CGH40010F GaN HEMT transistor operating at 2.6 GHz and is implemented on a Rogers RO4350B substrate with a dielectric constant of 3.66. The design consists of an input matching network, harmonic termination network, gate and drain bias networks, and an RF-to-DC output filtering circuit to maximize power conversion performance. The proposed rectifier was analyzed through circuit simulation using Keysight Advanced Design System (ADS) by varying the RF input power while maintaining a constant operating frequency of 2.6 GHz. Simulation results show that the rectifier achieves a maximum RF-to-DC power conversion efficiency of 66.487% with a DC output power of 8.415 W at an input power of 40 dBm. These results demonstrate that the proposed inverted gate topology effectively improves RF-to-DC energy conversion and has strong potential for high-power wireless power transfer (WPT) and rectenna-based wireless battery charging applications.